Comparing of Microhardness of the Stellite 6 Cobalt Alloy Implanted with 175 keV Mn+ Ions and 120 keV N+ Ions
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چکیده
منابع مشابه
Energy loss by keV ions in silicon.
Using silicon photodiodes with an ultrathin passivation layer, the average total energy lost to silicon target electrons (electronic stopping) by incident low energy ions and the recoil target atoms they generate is directly measured. We find that the total electronic energy deposition and the ratio of the total nuclear to electronic stopping powers for the incident ions and their recoils each ...
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ژورنال
عنوان ژورنال: Advances in Science and Technology Research Journal
سال: 2019
ISSN: 2080-4075,2299-8624
DOI: 10.12913/22998624/111965